, Volume 46, Issue 11, pp 1429–1431

Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy


  • A. N. Alexeev
    • NTO ZAO
  • D. M. Krasovitsky
    • Svetlana-Rost ZAO
  • V. P. Chaly
    • Svetlana-Rost ZAO
XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012

DOI: 10.1134/S1063782612110024

Cite this article as:
Alexeev, A.N., Krasovitsky, D.M., Petrov, S.I. et al. Semiconductors (2012) 46: 1429. doi:10.1134/S1063782612110024


The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range from 9 × 108 to 1 × 109 cm−2, compared with the case of growth on a thin low-temperature AlN nucleation layer. The decrease in the dislocation density causes a substantial increase in the electron mobility in the GaN layers to 600–650 cm2 V−1 s−1, which is in agreement with the results of calculations and is indicative of the high crystalline perfection of the layers.

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© Pleiades Publishing, Ltd. 2012