, Volume 46, Issue 8, pp 998-1002
Date: 06 Aug 2012

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

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The electric fields in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells are estimated. The quantum wells are grown by plasma-assisted molecular-beam epitaxy with plasma activation of nitrogen. The three-dimensional and planar modes of buffer layer growth are used. The transition to the three-dimensional mode of growth yields a substantial increase in the photoluminescence intensity of the quantum wells and a shift of the photoluminescence line to shorter wavelengths. These effects are attributed to the fact that, because of the extra three-dimensional localization of charge carriers in the quantum-well layer, the quantum-confined Stark effect relaxes. The effect of localization is supposedly due to spontaneous composition fluctuations formed in the AlGaN alloy and enhanced by the three-dimensional growth.

Original Russian Text © E.A. Shevchenko, V.N. Jmerik, A.M. Mizerov, A.A. Sitnikova, S.V. Ivanov, A.A. Toropov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 8, pp. 1022–1026.