Semiconductors

, Volume 46, Issue 8, pp 998–1002

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

  • E. A. Shevchenko
  • V. N. Jmerik
  • A. M. Mizerov
  • A. A. Sitnikova
  • S. V. Ivanov
  • A. A. Toropov
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

DOI: 10.1134/S1063782612080192

Cite this article as:
Shevchenko, E.A., Jmerik, V.N., Mizerov, A.M. et al. Semiconductors (2012) 46: 998. doi:10.1134/S1063782612080192

Abstract

The electric fields in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells are estimated. The quantum wells are grown by plasma-assisted molecular-beam epitaxy with plasma activation of nitrogen. The three-dimensional and planar modes of buffer layer growth are used. The transition to the three-dimensional mode of growth yields a substantial increase in the photoluminescence intensity of the quantum wells and a shift of the photoluminescence line to shorter wavelengths. These effects are attributed to the fact that, because of the extra three-dimensional localization of charge carriers in the quantum-well layer, the quantum-confined Stark effect relaxes. The effect of localization is supposedly due to spontaneous composition fluctuations formed in the AlGaN alloy and enhanced by the three-dimensional growth.

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • E. A. Shevchenko
    • 1
  • V. N. Jmerik
    • 1
  • A. M. Mizerov
    • 1
  • A. A. Sitnikova
    • 1
  • S. V. Ivanov
    • 1
  • A. A. Toropov
    • 1
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia