Semiconductors

, 45:1273

Band gap of CdTe and Cd0.9Zn0.1Te crystals

  • L. A. Kosyachenko
  • V. M. Sklyarchuk
  • O. V. Sklyarchuk
  • O. L. Maslyanchuk
Spectroscopy, Interaction with Radiation

DOI: 10.1134/S1063782611100137

Cite this article as:
Kosyachenko, L.A., Sklyarchuk, V.M., Sklyarchuk, O.V. et al. Semiconductors (2011) 45: 1273. doi:10.1134/S1063782611100137

Abstract

The band gap Eg of the CdTe and Cd0.9Zn0.1Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and γ radiation based on these materials (Eg = 1.39–1.54 and 1.51–1.6 eV for CdTe and Cd0.9Zn0.1Te, respectively). The used procedure of determination of Eg is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (Eg = 1.47–1.48 eV) and Cd0.9Zn0.1Te (Eg = 1.52–1.53 eV) at room temperature substantially narrow the range of accurate determination of Eg.

Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • L. A. Kosyachenko
    • 1
  • V. M. Sklyarchuk
    • 1
  • O. V. Sklyarchuk
    • 1
  • O. L. Maslyanchuk
    • 1
  1. 1.Chernovtsy National UniversityChernovtsyUkraine