, Volume 44, Issue 11, pp 1450-1456
Date: 19 Nov 2010

Formation and “white” photoluminescence of nanoclusters in SiO x films implanted with carbon ions

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Abstract

Experimental data on ion synthesis of nanocomposite layers with carbon-rich clusters and silicon nanocrystals by irradiation of nonstoichiometric silicon oxide (SiO x ) films with carbon ions followed by high-temperature annealing are reported. It is shown that, at rather high doses of C+ ions, the resulting films exhibit photoluminescence with a spectrum that encompass the entire visible and near-infrared regions. The formation of carbon-rich clusters and silicon nanocrystals is confirmed by X-ray photoelectron spectroscopy data. The distribution of carbon practically reproduces the calculated profile of ion ranges, suggesting that there is no noticeable diffusive redistribution of carbon. A qualitative model of the layered structure of ion-synthesized structures is suggested.

Original Russian Text © A.I. Belov, A.N. Mikhaylov, D.E. Nikolitchev, A.V. Boryakov, A.P. Sidorin, A.P. Gratchev, A.V. Ershov, D.I. Tetelbaum, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1498–1503.