, Volume 42, Issue 12, pp 1445-1449
Date: 17 Dec 2008

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

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The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production of epitaxial nanowire crystals in a system with a large lattice mismatch. The growth on porous substrates, the role of the surface orientation, high-temperature annealing, and presence of an oxide layer at the surface, and some other effects typical of growth of III–V nanowire crystals on the Si surface are studied and analyzed. Intense emission from the array of GaAs nanowire crystals grown on the Si (111) surface is observed.

Original Russian Text © Yu.B. Samsonenko, G.É. Cirlin, V.A. Egorov, N.K. Polyakov, V.P. Ulin, V.G. Dubrovskii, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 12, pp. 1478–1482.