Semiconductors

, Volume 42, Issue 12, pp 1445–1449

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

  • Yu. B. Samsonenko
  • G. É. Cirlin
  • V. A. Egorov
  • N. K. Polyakov
  • V. P. Ulin
  • V. G. Dubrovskii
Fabrication, Treatment, and Testing of Materials and Structures

DOI: 10.1134/S1063782608120130

Cite this article as:
Samsonenko, Y.B., Cirlin, G.É., Egorov, V.A. et al. Semiconductors (2008) 42: 1445. doi:10.1134/S1063782608120130

Abstract

The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production of epitaxial nanowire crystals in a system with a large lattice mismatch. The growth on porous substrates, the role of the surface orientation, high-temperature annealing, and presence of an oxide layer at the surface, and some other effects typical of growth of III–V nanowire crystals on the Si surface are studied and analyzed. Intense emission from the array of GaAs nanowire crystals grown on the Si (111) surface is observed.

PACS numbers

68.37.Hk 68.70.+w 81.05.Ea 81.07.-b 81.15.Hi 81.40.Tv 

Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • Yu. B. Samsonenko
    • 1
    • 2
    • 3
  • G. É. Cirlin
    • 1
    • 2
    • 3
  • V. A. Egorov
    • 1
    • 3
  • N. K. Polyakov
    • 1
    • 2
    • 3
  • V. P. Ulin
    • 2
  • V. G. Dubrovskii
    • 2
    • 3
  1. 1.Institute of Analytical InstrumentationRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.St. Petersburg Center of Research and Education in Physics and TechnologyRussian Academy of SciencesSt. PetersburgRussia