Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix
- Cite this article as:
- Ryabchikov, Y.V., Forsh, P.A., Lebedev, E.A. et al. Semiconductors (2006) 40: 1052. doi:10.1134/S1063782606090119
Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.