Semiconductors

, Volume 40, Issue 9, pp 1052–1054

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

  • Yu. V. Ryabchikov
  • P. A. Forsh
  • E. A. Lebedev
  • V. Yu. Timoshenko
  • P. K. Kashkarov
  • B. V. Kamenev
  • L. Tsybeskov
Semiconductor Structures, Interfaces, and Surfaces

DOI: 10.1134/S1063782606090119

Cite this article as:
Ryabchikov, Y.V., Forsh, P.A., Lebedev, E.A. et al. Semiconductors (2006) 40: 1052. doi:10.1134/S1063782606090119

Abstract

Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

PACS numbers

73.60. Bd72.80. Jc73.40. Gk

Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • Yu. V. Ryabchikov
    • 1
  • P. A. Forsh
    • 1
  • E. A. Lebedev
    • 2
  • V. Yu. Timoshenko
    • 1
  • P. K. Kashkarov
    • 1
  • B. V. Kamenev
    • 3
  • L. Tsybeskov
    • 3
  1. 1.Faculty of Physics, Moscow State UniversityVorob’evy gory, MoscowRussia
  2. 2.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.Department of Electrical and Computer EngineeringNew Jersey Institute of TechnologyNewarkUSA