, Volume 40, Issue 8, pp 959-967

Low-temperature materials and thin-film transistors for electronics on flexible substrates

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The deposition processes and electronic properties of thin-film semiconductors and insulators based on silicon in relation to the fabrication of electronic devices on flexible plastic substrates are considered. The films of amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiNx), and also thin-film transistors are fabricated at comparatively low temperatures (120°C, 75°C) using existing commercial plasma-chemical equipment. The parameters of thin-film transistors based on a-Si:H and fabricated at the aforementioned relatively low temperatures are compatible with those of high-temperature analogues.

Original Russian Text © A. Sazonov, M. Meitine, D. Stryakhilev, A. Nathan, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 8, pp. 986–994.