Semiconductors

, Volume 40, Issue 5, pp 605–610

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

  • A. A. Efremov
  • N. I. Bochkareva
  • R. I. Gorbunov
  • D. A. Lavrinovich
  • Yu. T. Rebane
  • D. V. Tarkhin
  • Yu. G. Shreter
Physics of Semiconductor Devices

DOI: 10.1134/S1063782606050162

Cite this article as:
Efremov, A.A., Bochkareva, N.I., Gorbunov, R.I. et al. Semiconductors (2006) 40: 605. doi:10.1134/S1063782606050162

Abstract

The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficiency of blue LEDs are studied. It is shown that, for optimal heat removal, decreasing of the LED efficiency as current increases to 100 mA is related to the effect of electric field on the efficiency of carrier injection into the QW. As current further increases up to 400 mA, the decrease in efficiency is caused by Joule heating. It is shown that the working current of LEDs can be increased by a factor of 5–7 under optimal heat removal conditions. Recommendations are given on the cooling of LEDs in a manner dependent on their power.

PACS numbers

85.60.Jb85.35.Be78.67.De

Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • A. A. Efremov
    • 1
  • N. I. Bochkareva
    • 2
  • R. I. Gorbunov
    • 2
  • D. A. Lavrinovich
    • 2
  • Yu. T. Rebane
    • 2
  • D. V. Tarkhin
    • 2
  • Yu. G. Shreter
    • 2
  1. 1.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia
  2. 2.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia