Journal of Experimental and Theoretical Physics

, Volume 115, Issue 6, pp 1062–1067

Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip

  • A. A. Zhukov
  • Ch. Volk
  • A. Winden
  • H. Hardtdegen
  • Th. Schäpers
Electronic Properties of Solid

DOI: 10.1134/S1063776112110131

Cite this article as:
Zhukov, A.A., Volk, C., Winden, A. et al. J. Exp. Theor. Phys. (2012) 115: 1062. doi:10.1134/S1063776112110131

Abstract

We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots on a decrease of the negative differential conductance is investigated in detail.

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • A. A. Zhukov
    • 1
  • Ch. Volk
    • 2
    • 3
  • A. Winden
    • 2
    • 3
  • H. Hardtdegen
    • 2
    • 3
  • Th. Schäpers
    • 2
    • 3
    • 4
  1. 1.Institute of Solid State PhysicsRussian Academy of ScienceChernogolovka, Moscow oblastRussia
  2. 2.Peter Grünberg Institut (PGI-9)JülichGermany
  3. 3.Forschungszentrum JülichJARA-Fundamentals of Future Information TechnologyJülichGermany
  4. 4.II. Physikalisches InstitutRWTH Aachen UniversityAachenGermany