, Volume 111, Issue 3, pp 431-439
Date: 11 Nov 2010

Investigation of ultrafast processes in photoexcited bismuth by broadband probing in the wavelength range 0.4–0.9 μm

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Abstract

The decay of the photoexcited state of a bismuth single crystal is investigated in the wavelength range from 400 to 900 nm by means of femtosecond laser reflection spectroscopy. Oscillations produced by coherent fully symmetric A 1g phonons have been detected in the photoinduced response, along with a relaxation component. The dynamics of the electronic subsystem of the crystal is shown to be characterized by three values of the decay time: 1 ps, 7 ps, and ∼1 ns. The spectral dependence of the reflectivity oscillation amplitude has been measured; the possible cause of the shape of the derived curve is described.

Original Russian Text © A.A. Melnikov, O.V. Misochko, V.O. Kompanets, A.L. Dobryakov, S.V. Chekalin, 2010, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 138, No. 3, pp. 486–496.