Journal of Experimental and Theoretical Physics

, Volume 110, Issue 4, pp 613–617

Tunneling conductance of the graphene SNS junction with a single localized defect

Electronic Properties of Solid

DOI: 10.1134/S1063776110040084

Cite this article as:
Bolmatov, D. & Mou, CY. J. Exp. Theor. Phys. (2010) 110: 613. doi:10.1134/S1063776110040084


Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit ldefL ≪ ξ. We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  1. 1.Department of PhysicsNational Tsing Hua UniversityHsinchuTaiwan
  2. 2.National Center for Theoretical SciencesHsinchuTaiwan

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