Russian Microelectronics

, Volume 45, Issue 1, pp 41–53

Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors

  • K. S. Grishakov
  • V. F. Elesin
  • N. I. Kargin
  • R. V. Ryzhuk
  • S. V. Minnebaev
Article

DOI: 10.1134/S1063739716010054

Cite this article as:
Grishakov, K.S., Elesin, V.F., Kargin, N.I. et al. Russ Microelectron (2016) 45: 41. doi:10.1134/S1063739716010054
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Abstract

A problem, which concerns the effect of the diamond heat-spreading layer on the temperature and voltage-current characteristics of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is solved for the first time in a hydrodynamic model (which includes the continuity equation, Poisson equation, and equations for electron and lattice temperatures). The mechanism of the occurrence of peak electron and lattice temperatures (hot spots) is analyzed. It is shown that introducing a heat spreader considerably reduces the maximum temperature (by 263 K for a sapphire substrate and by 163 K for a silicon carbide substrate) and improves the voltage-current characteristics. The effectiveness of the heat spreader is evaluated depending on its thickness, gate size, and substrate material to find the optimum design.

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • K. S. Grishakov
    • 1
  • V. F. Elesin
    • 1
  • N. I. Kargin
    • 1
  • R. V. Ryzhuk
    • 1
  • S. V. Minnebaev
    • 1
  1. 1.National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)MoscowRussia

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