Russian Microelectronics

, Volume 41, Issue 1, pp 41–50

Probe modification for scanning-probe microscopy by the focused ion beam method

  • B. G. Konoplev
  • O. A. Ageev
  • V. A. Smirnov
  • A. S. Kolomiitsev
  • N. I. Serbu
Article

DOI: 10.1134/S1063739712010052

Cite this article as:
Konoplev, B.G., Ageev, O.A., Smirnov, V.A. et al. Russ Microelectron (2012) 41: 41. doi:10.1134/S1063739712010052

Abstract

The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • B. G. Konoplev
    • 1
  • O. A. Ageev
    • 1
  • V. A. Smirnov
    • 1
  • A. S. Kolomiitsev
    • 1
  • N. I. Serbu
    • 1
  1. 1.Taganrog Institute of TechnologySouthern Federal UniversityRostov-on-DonRussia

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