Russian Microelectronics

, Volume 38, Issue 2, pp 71–86

The use of stressed silicon in MOS transistors and CMOS structures

Physics and Technology of MOS Transistors and CMOS Structures

DOI: 10.1134/S1063739709020012

Cite this article as:
Neizvestnyi, I.G. & Gridchin, V.A. Russ Microelectron (2009) 38: 71. doi:10.1134/S1063739709020012

Abstract

In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described.

PACS

85.60.Dw 

Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  1. 1.Institute of Semiconductor Physics, Siberian DivisionRussian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State Technical UniversityNovosibirskRussia