, Volume 38, Issue 2, pp 71-86
Date: 28 Mar 2009

The use of stressed silicon in MOS transistors and CMOS structures

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Abstract

In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described.

Original Russian Text © I.G. Neizvestnyi, V.A. Gridchin, 2009, published in Mikroelektronika, 2009, Vol. 38, No.2, pp. 83–98.