Russian Microelectronics

, Volume 36, Issue 1, pp 33–39

Dopant diffusion dynamics and optimal diffusion time as influenced by diffusion-coefficient nonuniformity

  • E. L. Pankratov
Process Technologies

DOI: 10.1134/S1063739707010040

Cite this article as:
Pankratov, E.L. Russ Microelectron (2007) 36: 33. doi:10.1134/S1063739707010040


The dynamics of dopant diffusion in forming a pn junction is investigated theoretically for an epilayer-substrate system. The influence is examined of diffusion-coefficient nonuniformity on the doping dynamics. On this basis, requirements for the depth profile of the diffusion coefficient are defined in respect of the junction abruptness and depth. Further, the optimal diffusion time is determined in terms of striking a balance between the doping uniformity in the epilayer and the abruptness of the junction.

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Copyright information

© Pleiades Publishing, Ltd. 2007

Authors and Affiliations

  • E. L. Pankratov
    • 1
  1. 1.Institute for Physics of MicrostructuresRussian Academy of SciencesNizhni NovgorodRussia

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