Laser Physics

, Volume 18, Issue 10, pp 1148–1152

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Interaction of Laser Radiation with Matter

DOI: 10.1134/S1054660X08100071

Cite this article as:
Liu, Y., Liu, S., Wang, Y. et al. Laser Phys. (2008) 18: 1148. doi:10.1134/S1054660X08100071

Abstract

Absorptive properties of surface-structured silicon prepared by femtosecond laser pulses irradiating in SF6 or N2 are measured in a wide wavelength range of 0.3–16.0 μm. The SF6-prepared surface-structured silicon shows enhanced light absorptance up to 80% or more in the entire measured wavelength range. The absorptance for N2_prepared surface-structured silicon in the wavelength range of 9–14 µm is similar to that of a SF6-prepared sample, although it decreases to about 30% in the wavelength range of 2–7 µm. Light absorption varies with the height and density of the spikes formed on silicon surfaces.

PACS numbers

78.68.+m 78.40.Fy 78.30.Am 81.65.Cf 

Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • Y. Liu
    • 1
  • S. Liu
    • 1
  • Y. Wang
    • 2
  • G. Feng
    • 2
  • J. Zhu
    • 1
  • L. Zhao
    • 1
  1. 1.Department of Physics and Surface Physics National Key LaboratoryFudan UniversityShanghaiChina
  2. 2.Spectrophotometry LaboratoryNational Institute of MetrologyBeijingChina

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