Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

  • V. A. Terekhov
  • S. Yu. Turishchev
  • K. N. Pankov
  • I. E. Zanin
  • E. P. Domashevskaya
  • D. I. Tetelbaum
  • A. N. Mikhailov
  • A. I. Belov
  • D. E. Nikolichev
Article

DOI: 10.1134/S102745101110020X

Cite this article as:
Terekhov, V.A., Turishchev, S.Y., Pankov, K.N. et al. J. Synch. Investig. (2011) 5: 958. doi:10.1134/S102745101110020X

Abstract

Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.

Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • V. A. Terekhov
    • 1
  • S. Yu. Turishchev
    • 1
  • K. N. Pankov
    • 1
  • I. E. Zanin
    • 1
  • E. P. Domashevskaya
    • 1
  • D. I. Tetelbaum
    • 2
  • A. N. Mikhailov
    • 2
  • A. I. Belov
    • 2
  • D. E. Nikolichev
    • 2
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.University of Nizhni NovgorodNizhni NovgorodRussia

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