Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals
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- Terekhov, V.A., Turishchev, S.Y., Pankov, K.N. et al. J. Synch. Investig. (2011) 5: 958. doi:10.1134/S102745101110020X
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Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L2,3 elementary silicon edge is detected. Models for this phenomenon are suggested.