Optics and Spectroscopy

, Volume 105, Issue 3, pp 461–465

The refractive index of homogeneous SiO2 thin films

  • S. V. Mutilin
  • T. Khasanov
Physical Optics

DOI: 10.1134/S0030400X0809018X

Cite this article as:
Mutilin, S.V. & Khasanov, T. Opt. Spectrosc. (2008) 105: 461. doi:10.1134/S0030400X0809018X

Abstract

The effect of the through-thickness inhomogeneity of SiO2 films on their refractive index is studied. The SiO2 films, deposited by tetraethoxysilane pyrolysis on plane-parallel oriented crystalline quartz substrates and on silicon plates, were etched layer-by-layer in Pliskin’s solution. The refractive index and the geometric thickness of films were calculated from the measured ellipsometric angles after each etching. The determination errors of the refractive indices as functions of the film thickness, which result from the measurement errors of the polarization angles and substrate parameters, are numerically analyzed. For SiO2 films thicker than 20nm, no effect of inhomogeneity is found. The refractive indices of thinner films were observed to depend on the thickness. The reasons for such dependences are discussed.

PACS numbers

78.20.Ci

Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • S. V. Mutilin
    • 1
  • T. Khasanov
    • 2
  1. 1.Novosibirsk State UniversityNovosibirskRussia
  2. 2.Institute of Semiconductor Physics, Siberian DivisionRussian Academy of SciencesNovosibirskRussia