Optics and Spectroscopy

, Volume 101, Issue 2, pp 253–264

Penetration of electric fields induced by surface phonon modes into the layers of a semiconductor heterostructure

  • I. D. Rukhlenko
  • A. V. Fedorov
Condensed-Matter Spectroscopy

DOI: 10.1134/S0030400X06080133

Cite this article as:
Rukhlenko, I.D. & Fedorov, A.V. Opt. Spectrosc. (2006) 101: 253. doi:10.1134/S0030400X06080133

Abstract

The penetration of electric fields induced by surface optical phonons into adjacent layers of semiconductor heterostructures is investigated. The mechanical displacement of ions, the corresponding electric fields, and the dispersion relations for surface phonon modes in single and double heterostructures are calculated within the macroscopic phenomenological model of optical lattice vibrations. To estimate the penetration depth of the surface electric fields, the intraband relaxation rate of the electron subsystem of a quantum dot embedded in a heterostructure, related to these fields, is calculated as a function of the distance from the interface between the media to the quantum dot.

PACS numbers

73.2073.21.L

Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • I. D. Rukhlenko
    • 1
  • A. V. Fedorov
    • 1
  1. 1.All-Russia Research Center Vavilov State Optical InstituteSt. PetersburgRussia