Optics and Spectroscopy

, Volume 100, Issue 2, pp 238–244

Propagation of electric fields induced by optical phonons in semiconductor heterostructures

  • I. D. Rukhlenko
  • A. V. Fedorov
Condensed-Matter Spectroscopy

DOI: 10.1134/S0030400X06020135

Cite this article as:
Rukhlenko, I.D. & Fedorov, A.V. Opt. Spectrosc. (2006) 100: 238. doi:10.1134/S0030400X06020135


The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the example of a cylindrical Ge quantum dot embedded in a GaP/GaAs heterostructure, it is shown that the electric fields induced by longitudinal optical phonons can penetrate through the interface between semiconductors at distances of about 100 nm.

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Copyright information

© Pleiades Publishing, Inc. 2006

Authors and Affiliations

  • I. D. Rukhlenko
    • 1
  • A. V. Fedorov
    • 1
  1. 1.All-Russia Research Center Vavilov State Optical InstituteSt. PetersburgRussia