Condensed-Matter Spectroscopy

Optics and Spectroscopy

, Volume 100, Issue 2, pp 238-244

First online:

Propagation of electric fields induced by optical phonons in semiconductor heterostructures

  • I. D. RukhlenkoAffiliated withAll-Russia Research Center Vavilov State Optical Institute
  • , A. V. FedorovAffiliated withAll-Russia Research Center Vavilov State Optical Institute

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access


The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the example of a cylindrical Ge quantum dot embedded in a GaP/GaAs heterostructure, it is shown that the electric fields induced by longitudinal optical phonons can penetrate through the interface between semiconductors at distances of about 100 nm.

PACS numbers