JETP Letters

, Volume 95, Issue 4, pp 198–200

Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(ZrxTi1 − x)O3 ferroelectric substrate

Condensed Matter

DOI: 10.1134/S002136401204008X

Cite this article as:
Strikha, M.V. Jetp Lett. (2012) 95: 198. doi:10.1134/S002136401204008X

Abstract

A numerical model has been proposed to explain the antihysteresis behavior of the resistivity of graphene on a Pb(ZrxTi1 − x)O3 ferroelectric substrate with a change in the gate voltage. The model takes into account the screening of the electric field in the substrate by electrons trapped in states connected with the graphene-ferroelectric interface and describes the previously obtained experimental dependences. The estimates can be important for creating elements of new-generation energy-independent memory using two stable resistivity values that appear in the antihysteresis effect; logical 0 and 1 are assigned to these two values.

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  1. 1.Lashkarev Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine

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