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Pressure-induced metamagnetic transition in the Cd0.7Mn0.3GeAs2 ferromagnetic semiconductor

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Abstract

The magnetic susceptibility χ/χ0 and the longitudinal Δρ zz /ρ0 and transverse Δρ xx /ρ0 magnetoresistances have been measured as functions of the hydrostatic pressure P ≤ 7 GPa at room temperature in the high-temperature ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 with a chalcopyrite structure and the Curie temperature T c = 355 K. A pressure-induced metamagnetic transition from the low-magnetization state to the high-magnetization state has been observed in Cd0.7Mn0.3GeAs2 near the magnetic ordering temperature. This transition is accompanied by the hysteresis of the magnetic susceptibility and magnetoresistance.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. M. Yaragskogo 94, Makhachkala, 367003, Russia

    A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, T. R. Arslanov & U. Z. Zalibekov

  2. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    V. M. Novotortsev & S. F. Marenkin

Authors
  1. A. Yu. Mollaev
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  2. I. K. Kamilov
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  3. R. K. Arslanov
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  4. T. R. Arslanov
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  5. U. Z. Zalibekov
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  6. V. M. Novotortsev
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  7. S. F. Marenkin
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Corresponding author

Correspondence to R. K. Arslanov.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, V.M. Novotortsev, S.F. Marenkin, 2010, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 91, No. 9, pp. 524–526.

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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. Pressure-induced metamagnetic transition in the Cd0.7Mn0.3GeAs2 ferromagnetic semiconductor. Jetp Lett. 91, 478–480 (2010). https://doi.org/10.1134/S0021364010090092

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  • DOI: https://doi.org/10.1134/S0021364010090092

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