JETP Letters

, Volume 90, Issue 12, pp 758–762

Direct bandgap optical transitions in Si nanocrystals

Authors

    • Ioffe Physico-Technical Institute
  • A. S. Moskalenko
    • Ioffe Physico-Technical Institute
    • Institut für PhysikMartin-Luther-Universität
  • I. N. Yassievich
    • Ioffe Physico-Technical Institute
  • W. D. A. M. de Boer
    • Van der Waals-Zeeman InstituteUniversity of Amsterdam
  • D. Timmerman
    • Van der Waals-Zeeman InstituteUniversity of Amsterdam
  • H. Zhang
    • Van’t Hoff Institute for Molecular SciencesUniversity of Amsterdam
  • W. J. Buma
    • Van’t Hoff Institute for Molecular SciencesUniversity of Amsterdam
  • T. Gregorkiewicz
    • Van der Waals-Zeeman InstituteUniversity of Amsterdam
Condensed Matter

DOI: 10.1134/S0021364009240059

Cite this article as:
Prokofiev, A.A., Moskalenko, A.S., Yassievich, I.N. et al. Jetp Lett. (2010) 90: 758. doi:10.1134/S0021364009240059

Abstract

The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the Γ-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its “red“ shift for smaller grains. We postulate to identify the frequently reported efficient blue emission (F-band) from Si nanocrystals with this zero-phonon recombination. In a dedicated experiment, we confirm the “red“ shift of the F-band, supporting the proposed identification.

Copyright information

© Pleiades Publishing, Ltd. 2009