Inorganic Materials

, Volume 48, Issue 14, pp 1291-1297

First online:

Peculiarities of electron-energy structure of surface layers of porous silicon formed on p-type substrates

  • E. P. DomashevskayaAffiliated withVoronezh State University Email author 
  • , V. A. TerekhovAffiliated withVoronezh State University
  • , S. Yu. TurishchevAffiliated withVoronezh State University
  • , D. A. KhovivAffiliated withVoronezh State University
  • , E. V. ParinovaAffiliated withVoronezh State University
  • , V. A. SkryshevskiiAffiliated withShevchenko National University
  • , I. V. Gavril’chenkoAffiliated withShevchenko National University

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The atomic and electron structure of porous silicon surface layers were investigated by the methods of ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy. The thicknesses of the surface oxide layer and the degree of distortion of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the surface oxide layer lying on the amorphous layer, which covers the nanocrystals of porous silicon upon keeping for a year, exceeds severalfold the thickness of the natural oxidation of plates of monocrystalline silicon. The distortions of the silicon-oxygen tetrahedron—the main structural unit of silicon oxide—are accompanied by the strain of Si-O bonds and the increase in Si-O-Si bond angles.


porous silicon electron structure phase composition X-ray spectroscopy