, Volume 48, Issue 14, pp 1291-1297

Peculiarities of electron-energy structure of surface layers of porous silicon formed on p-type substrates

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Abstract

The atomic and electron structure of porous silicon surface layers were investigated by the methods of ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy. The thicknesses of the surface oxide layer and the degree of distortion of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the surface oxide layer lying on the amorphous layer, which covers the nanocrystals of porous silicon upon keeping for a year, exceeds severalfold the thickness of the natural oxidation of plates of monocrystalline silicon. The distortions of the silicon-oxygen tetrahedron—the main structural unit of silicon oxide—are accompanied by the strain of Si-O bonds and the increase in Si-O-Si bond angles.

Original Russian Text © E.P. Domashevskaya, V.A. Terekhov, S.Yu. Turishchev, D.A. Khoviv, E.V. Parinova, V.A. Skryshevskii, I.V. Gavril’chenko, 2011, published in Zavodskaya Laboratoriya. Diagnostika materialov, 2011, Vol. 77, No. 1, pp. 42–48.