Journal of Experimental and Theoretical Physics Letters

, Volume 68, Issue 4, pp 363–369

Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous In-O films

Authors

  • V. F. Gantmakher
    • Institute of Solid State PhysicsRussian Academy of Sciences
  • M. V. Golubkov
    • Institute of Solid State PhysicsRussian Academy of Sciences
  • V. T. Dolgopolov
    • Institute of Solid State PhysicsRussian Academy of Sciences
  • G. E. Tsydynzhapov
    • Institute of Solid State PhysicsRussian Academy of Sciences
  • A. A. Shashkin
    • Institute of Solid State PhysicsRussian Academy of Sciences
Article

DOI: 10.1134/1.567874

Cite this article as:
Gantmakher, V.F., Golubkov, M.V., Dolgopolov, V.T. et al. Jetp Lett. (1998) 68: 363. doi:10.1134/1.567874

Abstract

The field-induced superconductivity-destroying quantum transition in amorphous indium oxide films are investigated at low temperatures down to 30 mK. It is found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increase of the magnetic field the resistance of the film drops and in the high-field limit approaches the resistance value at the transition point, so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron pairs.

PACS numbers

74.25.Jb74.76.Db74.70.Ad

Copyright information

© MAIK "Nauka/Interperiodica" 1998