Solid-State Electronics

Technical Physics

, Volume 50, Issue 8, pp 1043-1047

First online:

Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography

  • E. M. ArakcheevaAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , E. M. TanklevskayaAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , S. I. NesterovAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , M. V. MaksimovAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , S. A. GurevichAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , J. SeekampAffiliated withDepartment of Electrical and Information Engineering, Institute of Materials Science, University of Wuppertal
  • , C. M. Sotomayor TorresAffiliated withDepartment of Electrical and Information Engineering, Institute of Materials Science, University of Wuppertal

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Abstract

The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One-dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 μm through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls.