Technical Physics

, Volume 50, Issue 8, pp 1043–1047

Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography

Authors

  • E. M. Arakcheeva
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • E. M. Tanklevskaya
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • S. I. Nesterov
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • M. V. Maksimov
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • S. A. Gurevich
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • J. Seekamp
    • Department of Electrical and Information Engineering, Institute of Materials ScienceUniversity of Wuppertal
  • C. M. Sotomayor Torres
    • Department of Electrical and Information Engineering, Institute of Materials ScienceUniversity of Wuppertal
Solid-State Electronics

DOI: 10.1134/1.2014536

Cite this article as:
Arakcheeva, E.M., Tanklevskaya, E.M., Nesterov, S.I. et al. Tech. Phys. (2005) 50: 1043. doi:10.1134/1.2014536

Abstract

The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One-dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 μm through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls.

Copyright information

© Pleiades Publishing, Inc. 2005