, Volume 38, Issue 6, pp 732-735

High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

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Abstract

Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 6, 2004, pp. 763–766.
Original Russian Text Copyright © 2004 by Maksimov, Shernyakov, Kryzhanovskaya, Gladyshev, Musikhin, Ledentsov, Zhukov, Vasil’ev, Kovsh, Mikhrin, Semenova, Maleev, Nikitina, Ustinov, Alferov.