Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
- Cite this article as:
- Lundin, W.V., Sakharov, A.V., Tsatsul’nikov, A.F. et al. Semiconductors (2004) 38: 678. doi:10.1134/1.1766372
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Special features of metal-organic chemical vapor deposition of AlGaN epitaxial layers and AlGaN/GaN superlattices either in an Epiquip VP-50 RP research and development reactor (for a single wafer 2 in. in diameter) or in an AIX2000HT production-scale reactor (for up to six wafers 2 in. in diameter) are stud-ied. It is found that the dependence of the aluminum content in the solid phase on the trimethylaluminum (TMA) flux in a reactor levels off; this effect hinders the growth of the layers with a high aluminum content in both types of reactors and is more pronounced in the larger reactor (AIX2000HT). Presumably, this effect is a consequence of spurious reactions in the vapor phase and depends on the partial pressure of TMA in the reactor. The aluminum content in the layers can be increased not only by reducing the total pressure in the reactor but also by increasing the total gas flow through the reactor and reducing the trimethylgallium flux. The approaches described above were used to grow layers with a mole fraction of AlN as large as 20% in the AIX2000HT production-scale reactor at a pressure of 400 mbar (this fraction was as large as 40% at 200 mbar). AlGaN layers with the entire range of composition were grown in the Epiquip VP-50 RP reactor.