On the origin of ferromagnetism in semiconducting TiO2−δ:Co oxide
- Cite this article as:
- Balagurov, L.A., Klimonsky, S.O., Kobeleva, S.P. et al. Jetp Lett. (2004) 79: 98. doi:10.1134/1.1690360
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In Co-doped TiO2−δ oxide films deposited on SrTiO3(100) substrates, a room-temperature ferromagnetism is found to occur only in a limited charge-carrier concentration interval from 2×1018− 5×1022 cm−3. This indirectly testifies that ferromagnetism in the aforementioned n-type semiconductor is associated with the exchange interaction of magnetic ions via conduction electrons rather than with the formation of Co clusters in the material. The magnetic moment per Co atom is 0.8μB in the TiO cubic phase and 0.5μB in the anatase tetragonal phase of TiO2.