Technical Physics Letters

, Volume 30, Issue 1, pp 9–11

High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures

  • D. A. Livshits
  • A. R. Kovsh
  • A. E. Zhukov
  • N. A. Maleev
  • S. S. Mikhrin
  • A. P. Vasil’ev
  • E. V. Nikitina
  • V. M. Ustinov
  • N. N. Ledentsov
  • G. Lin
  • J. Chi
Article

DOI: 10.1134/1.1646701

Cite this article as:
Livshits, D.A., Kovsh, A.R., Zhukov, A.E. et al. Tech. Phys. Lett. (2004) 30: 9. doi:10.1134/1.1646701

Abstract

Single-mode lasers operating in the 1.3 μ m wavelength range have been obtained with the active region based on InAs/AlGaAs/GaAs quantum dot heterostructures. A minimum threshold current of about 1.4 mA is reached, which is a record value for ridge waveguide lasers. The maximum efficiency and maximum output power in the cw lasing mode are 0.73 W/A and 120 mW, respectively.

Copyright information

© MAIK "Nauka/Interperiodica" 2004

Authors and Affiliations

  • D. A. Livshits
    • 1
  • A. R. Kovsh
    • 1
  • A. E. Zhukov
    • 1
  • N. A. Maleev
    • 1
  • S. S. Mikhrin
    • 1
  • A. P. Vasil’ev
    • 1
  • E. V. Nikitina
    • 1
  • V. M. Ustinov
    • 1
  • N. N. Ledentsov
    • 1
  • G. Lin
    • 2
  • J. Chi
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Industrial Technology Research InstituteHsinchuTaiwan R.O.C.