Crystallography Reports

, Volume 49, Issue 1, pp 53–59

Growth and structure of La3Zr0.5Ga5Si0.5O14 crystals

Authors

  • A. A. Pugacheva
    • Physics FacultyMoscow State University
  • B. A. Maksimov
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • B. V. Mill’
    • Physics FacultyMoscow State University
  • Yu. V. Pisarevskii
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • D. F. Kondakov
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • T. S. Chernaya
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • I. A. Verin
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • V. N. Molchanov
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
  • V. I. Simonov
    • Shubnikov Institute of CrystallographyRussian Academy of Sciences
Structure of Inorganic Compounds

DOI: 10.1134/1.1643964

Cite this article as:
Pugacheva, A.A., Maksimov, B.A., Mill’, B.V. et al. Crystallogr. Rep. (2004) 49: 53. doi:10.1134/1.1643964

Abstract

The complete X-ray structure determination of Czochralski grown La3Zr0.5Ga5Si0.5O14 single crystals with the Ca3Ga2Ge4O14 structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo Kα1 radiation, 1920 crystallographically independent reflections, R = 0.0166, Rw = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (∼1.2%) from the 3e to 6g position may give rise to the formation of structural defects.

Copyright information

© MAIK "Nauka/Interperiodica" 2004