, Volume 78, Issue 5, pp 309-313

On the possibility of the direct study of local electron-phonon interaction in semiconductors

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Abstract

Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling.

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Translated from Pis’ma v Zhurnal Éksperimental’no \(\overset{\lower0.5em\hbox{\(\smash{\scriptscriptstyle\smile}\)}}{l} \) i Teoretichesko \(\overset{\lower0.5em\hbox{\(\smash{\scriptscriptstyle\smile}\)}}{l} \) Fiziki, Vol. 78, No. 5, 2003, pp. 757–762.
Original Russian Text Copyright © 2003 by Gavryushin.