Technical Physics

, Volume 48, Issue 5, pp 647–650

Electrical performance of hgInTe surface-barrier photodiodes

Authors

  • L. A. Kosyachenko
    • Fed’kovich National University
  • Yu. S. Paranchich
    • Fed’kovich National University
  • V. N. Makogonenko
    • Fed’kovich National University
  • V. M. Sklyarchuk
    • Fed’kovich National University
  • E. F. Sklyarchuk
    • Fed’kovich National University
  • I. I. German
    • Fed’kovich National University
Brief Communications

DOI: 10.1134/1.1576485

Cite this article as:
Kosyachenko, L.A., Paranchich, Y.S., Makogonenko, V.N. et al. Tech. Phys. (2003) 48: 647. doi:10.1134/1.1576485

Abstract

Surface-barrier photodiodes prepared by the vacuum deposition of a semi-transparent gold layer on Hg3In2Te6 single-crystal substrates are studied. I-V characteristics taken at temperatures between 278 and 323 K and the photosensitivity spectrum recorded in the range 0.6–1.8 µm, which is of great importance for fiber-optics communication, are given. Charge transfer mechanisms are treated in terms of generation-recombination processes in the space-charge region of the diode.

Copyright information

© MAIK "Nauka/Interperiodica" 2003