Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature
- Cite this article as:
- Burbaev, T.M., Kurbatov, V.A., Pogosov, A.O. et al. Semiconductors (2003) 37: 207. doi:10.1134/1.1548666
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The low-temperature (T=2 K) photoluminescence (PL) has been studied in Si/Ge structures grown by MBE at a low (250–350°C) temperature of Ge deposition. The luminescence spectra change dramatically when the average thickness of the Ge layer exceeds six monolayers. In this case, the PL line from the pseudomorphic layer (quantum well) retains its spectral position and increases in intensity at the expense of the luminescence line from islands (quantum dots), which then totally fades. The data obtained indicate a considerable difference between the epitaxial growth modes dominating in low and conventional (500–700°C) temperature ranges.