Semiconductors

, Volume 36, Issue 10, pp 1180–1183

Crystallization of amorphous hydrogenated silicon films deposited under various conditions

Authors

  • O. A. Golikova
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • E. V. Bogdanova
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • U. S. Babakhodzhaev
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
Amorphous, Vitreous, and Porous Semiconductors

DOI: 10.1134/1.1513865

Cite this article as:
Golikova, O.A., Bogdanova, E.V. & Babakhodzhaev, U.S. Semiconductors (2002) 36: 1180. doi:10.1134/1.1513865

Abstract

The possibility of using the magnetron-assisted silane decomposition technique for the deposition of a-Si:H films as the basic materials for the production of polysilicon is analyzed. It is shown how specific features of the film structure affect the crystallization process.

Copyright information

© MAIK "Nauka/Interperiodica" 2002