Electron-plasmon interaction in acceptor-doped bismuth crystals
- Cite this article as:
- Stepanov, N.P. & Grabov, V.M. Semiconductors (2002) 36: 971. doi:10.1134/1.1507274
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By doping the semimetal bismuth, it is possible to equate a plasma-oscillation energy with a band gap at the L point of the Brillouin zone. In this case, modifications in the reflection spectra are observed. The analysis of experimental data shows that the plasmon excitation is an efficient mechanism of electron-hole recombination provided that ℏωp=EG.