Semiconductors

, Volume 36, Issue 9, pp 971–974

Electron-plasmon interaction in acceptor-doped bismuth crystals

Authors

  • N. P. Stepanov
    • Transbaikalian State Pedagogical University
  • V. M. Grabov
    • Hertzen State Pedagogical University
Electronic and Optical Properties of Semiconductors

DOI: 10.1134/1.1507274

Cite this article as:
Stepanov, N.P. & Grabov, V.M. Semiconductors (2002) 36: 971. doi:10.1134/1.1507274

Abstract

By doping the semimetal bismuth, it is possible to equate a plasma-oscillation energy with a band gap at the L point of the Brillouin zone. In this case, modifications in the reflection spectra are observed. The analysis of experimental data shows that the plasmon excitation is an efficient mechanism of electron-hole recombination provided that ℏωp=EG.

Copyright information

© MAIK "Nauka/Interperiodica" 2002