Semiconductors

, Volume 36, Issue 8, pp 944–949

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

  • M. Aidaraliev
  • N. V. Zotova
  • S. A. Karandashev
  • B. A. Matveev
  • M. A. Remennyi
  • N. M. Stus’
  • G. N. Talalakin
  • V. V. Shustov
  • V. V. Kuznetsov
  • E. A. Kognovitskaya
Physics of Semiconductor Devices

DOI: 10.1134/1.1500478

Cite this article as:
Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Semiconductors (2002) 36: 944. doi:10.1134/1.1500478

Abstract

It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga0.92In0.08P0.05As0.08Sb0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.

Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • M. Aidaraliev
    • 1
  • N. V. Zotova
    • 1
  • S. A. Karandashev
    • 1
  • B. A. Matveev
    • 1
  • M. A. Remennyi
    • 1
  • N. M. Stus’
    • 1
  • G. N. Talalakin
    • 1
  • V. V. Shustov
    • 1
  • V. V. Kuznetsov
    • 2
  • E. A. Kognovitskaya
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State Electrotechnical UniversitySt. PetersburgRussia