Semiconductors

, Volume 36, Issue 8, pp 944–949

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

Authors

  • M. Aidaraliev
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • N. V. Zotova
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • S. A. Karandashev
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • B. A. Matveev
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • M. A. Remennyi
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • N. M. Stus’
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • G. N. Talalakin
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • V. V. Shustov
    • Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • V. V. Kuznetsov
    • St. Petersburg State Electrotechnical University
  • E. A. Kognovitskaya
    • St. Petersburg State Electrotechnical University
Physics of Semiconductor Devices

DOI: 10.1134/1.1500478

Cite this article as:
Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Semiconductors (2002) 36: 944. doi:10.1134/1.1500478

Abstract

It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga0.92In0.08P0.05As0.08Sb0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.

Copyright information

© MAIK "Nauka/Interperiodica" 2002