Semiconductors

, Volume 35, Issue 12, pp 1378–1382

Ostwald ripening of quantum-dot nanostructures

Authors

  • R. D. Vengrenovich
    • Fed’kovich State University
  • Yu. V. Gudyma
    • Fed’kovich State University
  • S. V. Yarema
    • Fed’kovich State University
Low-Dimensional Systems

DOI: 10.1134/1.1427975

Cite this article as:
Vengrenovich, R.D., Gudyma, Y.V. & Yarema, S.V. Semiconductors (2001) 35: 1378. doi:10.1134/1.1427975

Abstract

We suggest a scenario for the formation of quantum dots during Ostwald ripening of three-dimensional islands grown heteroepitaxially in the Stranski-Krastanow mode. We demonstrate that the size-distribution function narrows down and the variance decreases noticeably if the growth proceeds through dislocation diffusion followed by the detachment of dislocations from island bases. Plausible reasons for termination of the Ostwald ripening of the islands are discussed.

Copyright information

© MAIK "Nauka/Interperiodica" 2001