Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
- Cite this article as:
- Ustinov, V.M., Kovsh, A.R., Zhukov, A.E. et al. Tech. Phys. Lett. (1998) 24: 22. doi:10.1134/1.1261977
- 20 Downloads
The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm2.