, Volume 24, Issue 1, pp 22-23

Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

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Abstract

The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm2.

Pis’ma Zh. Tekh. Fiz. 24, 49–54 (January 12, 1998)