Technical Physics

, Volume 43, Issue 9, pp 1119–1120

Schottky barrier UV photodetectors based on zinc selenide

Authors

  • V. P. Makhnii
    • Chernovtsy State University
Brief Communications

DOI: 10.1134/1.1259145

Cite this article as:
Makhnii, V.P. Tech. Phys. (1998) 43: 1119. doi:10.1134/1.1259145

Abstract

The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered.

Copyright information

© American Institute of Physics 1998