The Physics of Semiconductor Devices

Semiconductors

, Volume 33, Issue 5, pp 578-585

First online:

D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

  • M. V. CheremisinAffiliated withA. F. Ioffe Physicotechnical Institute, Russian Academy of SciencesGES, 074
  • , G. G. SamsonidzeAffiliated withA. F. Ioffe Physicotechnical Institute, Russian Academy of SciencesDepartment of Electrical Engineering, University of Maryland

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data.