D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel
- Cite this article as:
- Cheremisin, M.V. & Samsonidze, G.G. Semiconductors (1999) 33: 578. doi:10.1134/1.1187732
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The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data.