Semiconductors

, Volume 33, Issue 5, pp 578–585

D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

  • M. V. Cheremisin
  • G. G. Samsonidze
The Physics of Semiconductor Devices

DOI: 10.1134/1.1187732

Cite this article as:
Cheremisin, M.V. & Samsonidze, G.G. Semiconductors (1999) 33: 578. doi:10.1134/1.1187732

Abstract

The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data.

Copyright information

© American Institute of Physics 1999

Authors and Affiliations

  • M. V. Cheremisin
    • 1
    • 2
  • G. G. Samsonidze
    • 1
    • 3
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.GES, 074France
  3. 3.Department of Electrical EngineeringUniversity of MarylandBaltimoreUSA