Semiconductors

, Volume 32, Issue 7, pp 734–735

Preparation and properties of GeS2 single crystals

Authors

  • A. V. Golubkov
    • A. F. Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • G. B. Dubrovskii
    • A. F. Ioffe Physicotechnical InstituteRussian Academy of Sciences
  • A. I. Shelykh
    • A. F. Ioffe Physicotechnical InstituteRussian Academy of Sciences
Electronic and Optical Properties of Semiconductors

DOI: 10.1134/1.1187494

Cite this article as:
Golubkov, A.V., Dubrovskii, G.B. & Shelykh, A.I. Semiconductors (1998) 32: 734. doi:10.1134/1.1187494

Abstract

Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 Å, b=16.09 Å, c=6.7 Å, and β=91°. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV.

Copyright information

© American Institute of Physics 1998