Preparation and properties of GeS2 single crystals
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Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 Å, b=16.09 Å, c=6.7 Å, and β=91°. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV.
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- A. Feltz, Amorphe und glasartige anorganische Festk〈F6〉rper (Amorphous and Glassy Inorganic Solids) (Akademie-Verlag, Berlin, 1983) [Moscow, 1986].
- Preparation and properties of GeS2 single crystals
Volume 32, Issue 7 , pp 734-735
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