Preparation and properties of GeS2 single crystals
Rent the article at a discountRent now
* Final gross prices may vary according to local VAT.Get Access
Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 Å, b=16.09 Å, c=6.7 Å, and β=91°. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV.
- M. Rubenstein and G. Roland, Acta Crystallogr. 27, 505 (1971).
- A. Feltz, Amorphe und glasartige anorganische Festk〈F6〉rper (Amorphous and Glassy Inorganic Solids) (Akademie-Verlag, Berlin, 1983) [Moscow, 1986].
- Preparation and properties of GeS2 single crystals
Volume 32, Issue 7 , pp 734-735
- Cover Date
- Print ISSN
- Online ISSN
- Additional Links
- Industry Sectors