High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
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- Faleev, N.N., Chaldyshev, V.V., Kunitsyn, A.E. et al. Semiconductors (1998) 32: 19. doi:10.1134/1.1187352
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InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature are investigated by high-resolution x-ray diffractometry. It is shown that despite a very high density of point defects due to the presence of excess arsenic, the as-grown superlattice has high crystal perfection. An analysis of the changes in the x-ray diffraction curves shows that high-temperature annealing, which is accompanied by the formation of As clusters and diffusion of indium, produces significant structural transformations in the GaAs matrix and at the interfaces.