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Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors

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Abstract

We have studied the response speed characteristics of capacitor structures based on thin Ba0.3Sr0.7TiO3 (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.

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Correspondence to A. B. Kozyrev.

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Original Russian Text © A.B. Kozyrev, M.M. Gaĭdukov, A.G. Gagarin, A.G. Altynnikov, S.V. Razumov, A.V. Tumarkin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 13, pp. 1–7.

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Kozyrev, A.B., Gaĭdukov, M.M., Gagarin, A.G. et al. Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors. Tech. Phys. Lett. 35, 585–588 (2009). https://doi.org/10.1134/S1063785009070013

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  • DOI: https://doi.org/10.1134/S1063785009070013

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