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Electron-plasmon interaction in acceptor-doped bismuth crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

By doping the semimetal bismuth, it is possible to equate a plasma-oscillation energy with a band gap at the L point of the Brillouin zone. In this case, modifications in the reflection spectra are observed. The analysis of experimental data shows that the plasmon excitation is an efficient mechanism of electron-hole recombination provided that ℏωp=E G.

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Authors and Affiliations

  1. Transbaikalian State Pedagogical University, Chita, 672000, Russia

    N. P. Stepanov

  2. Hertzen State Pedagogical University, St. Petersburg, 191186, Russia

    V. M. Grabov

Authors
  1. N. P. Stepanov
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  2. V. M. Grabov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 9, 2002, pp. 1045–1048.

Original Russian Text Copyright © 2002 by Stepanov, Grabov.

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Stepanov, N.P., Grabov, V.M. Electron-plasmon interaction in acceptor-doped bismuth crystals. Semiconductors 36, 971–974 (2002). https://doi.org/10.1134/1.1507274

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  • DOI: https://doi.org/10.1134/1.1507274

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