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Preparation, Structure, and Optical Properties of Thin ZnAs2 Films

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Abstract

X-ray amorphous ZnAs2 films were produced on various transparent substrates by thermal evaporation. The composition of the films was found to depend on the source temperature. Stoichiometric films were deposited at source temperatures of 765 ± 20 K. The evaporation and deposition rates calculated in a layerwise vaporization model agree with those found in experiment. The intrinsic edge in the IR transmission spectra of the films is broader and is shifted to longer wavelengths in comparison with bulk ZnAs2 crystals. The high 300-K transmittance (≥40%) of the films in the range 1.4–16 μm is of practical interest in devising sharp-cutoff IR filters.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    S. F. Marenkin, A. Yu. Vol'fkovich & N. B. Kondakov

  2. Moscow State University, Moscow, 119899, Russia

    V. A. Morozova & V. V. Astakhov

  3. Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 3, Novosibirsk, 630090, Russia

    G. S. Yur'ev

Authors
  1. S. F. Marenkin
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  2. V. A. Morozova
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  3. G. S. Yur'ev
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  4. A. Yu. Vol'fkovich
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  5. V. V. Astakhov
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  6. N. B. Kondakov
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Marenkin, S.F., Morozova, V.A., Yur'ev, G.S. et al. Preparation, Structure, and Optical Properties of Thin ZnAs2 Films. Inorganic Materials 38, 781–783 (2002). https://doi.org/10.1023/A:1019718625643

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  • DOI: https://doi.org/10.1023/A:1019718625643

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