Abstract
Growth of optically uniform and single ferroelectric domain KTP crystals is of prime importance for frequency-conversion applications. In the course of KTP growth from pure self-fluxes the flux becomes enriched in potassium causing a gradual increase of potassium content in the crystal as well. We have shown that such an effect can be well characterized by a corresponding increase in the Curie temperature of the crystal. Establishment of the potassium concentration gradients is followed by charge separation and production of a built-in electric field, which can be enhanced or diminished also by the incorporation of charge-compensating residual impurities. The magnitude of the built-in electric field is directly proportional to the projection of the potassium concentration gradient on the crystal's Z-axis, and it defines the domain direction in immersion seeded or different configurations of the top-seeded growth of KTP crystals. Detailed investigation of the domain formation mechanisms has allowed us to suggest a number of ways of growing single domain crystals, such as top-seeded growth with pulling in the Z-direction. Pulling in the X-direction is shown to yield predominantly bi-domain crystals. The formation of bi-domains and complex domain structures along the growth sector boundaries is explained in terms of edge-like and apex-like growth perturbations, respectively, which are due to temperature fluctuations at the growth interface. The knowledge of parameters influencing the domain formation mechanisms has allowed us to develop a technique for obtaining as-grown periodic domain structures necessary for large aperture (high-power) frequency conversion applications. © 2001 Kluwer Academic Publishers
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References
L. K. ChengandJ. D. Bierlein,Ferroelectrics 142(1993) 209.
N. Angert, M. Tseitlin, L. Kaplun, E. YashchinandM. Roth, ibid.142(1994) 117.
G. M. LoiaconoandR. A. Stolzenberger,Appl. Phys. Lett. 53(1988) 1498.
F. C. Zumsteg, J. D. BierleinandT. E. Gier,J. Appl. Phys. 47(1976) 4980.
J. D. BierleinandF. Ahmed,Appl. Phys. Lett. 51(1987) 1328.
L. P. Shi, J. Chrosch, J. Y. WangandY. G. Lin,Cryst. Res. Technol. 27(1992) K76.
L. K. Cheng, L. T. Cheng, J. Galperin, P. A. Morris HotsenpillerandJ. D. Bierlein,J. Cryst. Growth 137(1994) 107.
N. Angert, L. Kaplun, M. Tseitlin, E. YashchinandM. Roth, ibid.137(1994) 116.
M. N. SatyanaryanandH. L. Bhat, ibid.181(1997) 281.
J. A. Armstrong, N. Blombergen, J. DucuingandP. S. Pershan,Phys. Rev. 127(1962) 1918.
D. Eger, M. Oron, M. KatzandA. Zussman,Appl. Phys. Lett. 64(1994) 3208.
A. Arie, G. Rosenman, V. Mahal, A. Skliar, M. Oron, M. KatzandD. Eger,Opt. Commun. 142(1997) 265.
G. M. Loiacono, T. F. McgeeandG. Kostecky,J. Cryst. Growth 104(1990) 389.
R. J. Bolt, ibid.126(1993) 175.
N. Angert, M. Tseitlin, E. YashchinandM. Roth,Appl. Phys. Lett. 67(1995) 1941.
M. E. Hagerman, V. L. KozhevnikovandK. R. Poeppelmeier,Chem. Mater. 5(1993) 1211.
P. A. Morris, A. Foretti, J. D. BierleinandG. M. Loiacono,J. Cryst. Growth 109(1991) 367.
M. G. Roelofs,J. Appl. Phys. 65(1989) 4976.
V. D. Kugel, G. Rosenman, N. Angert, E. YashchinandM. Roth, ibid.76(1994) 4823.
V. A. Kolesinskas, N. I. Pavlova, I. S. RezandJ. P. Grigas,Sov. Phys.-Collect. 22(1982) 68.
T. Sasaki, A. Miyamoto, A. YokotaniandS. Nakai,J. Cryst. Growth 128(1993) 950.
L. T. Cheng, L. K. Cheng, R. L. HarlowandJ. D. Bierlein,Appl. Phys. Lett. 64(1994) 155.
V. I. Chani, K. Shimamura, Sh. EndoandT. Fukuda,J. Cryst. Growth 173(1997) 117.
K. T. Stevens, L. E. Halliburton, M. Roth, N. AngertandM. Tseitlin,J. Appl. Phys. 88(2000) 6239.
R. J. BoltandW. J. P. Enckevort,J. Cryst. Growth 119(1992) 329.
A. A. Chernov, ibid.24/25(1974) 11.
J. A. Burton, R. C. PrimandW. P. Slichter,J. Chem. Phys. 21(1953) 1987.
D. ElwellandH. J. Scheel, “Crystal Growth from Hightemperature Solutions” (Academic Press, New York, 1975) p. 294.
F. J. Kumar, D. Jayaraman, C. SubramanianandP. Ramasamy,J. Cryst. Growth 137(1994) 535.
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Roth, M., Angert, N. & Tseitlin, M. Growth-dependent properties of KTP crystals and PPKTP structures. Journal of Materials Science: Materials in Electronics 12, 429–436 (2001). https://doi.org/10.1023/A:1011835314438
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DOI: https://doi.org/10.1023/A:1011835314438