Fabrication of thin films of bismuth selenide using novel single-source precursors by metal organic chemical vapor deposition
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- Waters, J., Crouch, D., O'Brien, P. et al. Journal of Materials Science: Materials in Electronics (2003) 14: 599. doi:10.1023/A:1024574508327
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A metal-organic compound, Bi[(SePiPr2)2N]3 has been synthesized and used as a single-source precursor for the deposition of bismuth selenide thin films via low-pressure metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi2Se3 have been deposited on glass substrates. The films have been characterized by X-ray powder diffraction, scanning electron microscopy and energy dispersive analysis of X-rays.