Fabrication of thin films of bismuth selenide using novel single-source precursors by metal organic chemical vapor deposition

  • J. Waters
  • D. Crouch
  • P. O'Brien
  • Jin-Ho Park
Article

DOI: 10.1023/A:1024574508327

Cite this article as:
Waters, J., Crouch, D., O'Brien, P. et al. Journal of Materials Science: Materials in Electronics (2003) 14: 599. doi:10.1023/A:1024574508327

Abstract

A metal-organic compound, Bi[(SePiPr2)2N]3 has been synthesized and used as a single-source precursor for the deposition of bismuth selenide thin films via low-pressure metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi2Se3 have been deposited on glass substrates. The films have been characterized by X-ray powder diffraction, scanning electron microscopy and energy dispersive analysis of X-rays.

Copyright information

© Kluwer Academic Publishers 2003

Authors and Affiliations

  • J. Waters
    • 1
  • D. Crouch
    • 1
  • P. O'Brien
    • 1
  • Jin-Ho Park
    • 1
  1. 1.Department of Chemistry and Manchester Materials Science CentreUniversity of ManchesterManchesterUK