Article

Journal of Materials Science: Materials in Electronics

, Volume 14, Issue 5, pp 459-462

3D atomic imaging of SiGe system by X-ray fluorescence holography

  • K. HayashiAffiliated withInstitute for Materials Research, Tohoku University of Aoba-ku
  • , Y. TakahashiAffiliated withInstitute for Materials Research, Tohoku University of Aoba-ku
  • , E. MatsubaraAffiliated withInstitute for Materials Research, Tohoku University of Aoba-ku
  • , K. NakajimaAffiliated withInstitute for Materials Research, Tohoku University of Aoba-ku
  • , N. UsamiAffiliated withInstitute for Materials Research, Tohoku University of Aoba-ku

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Abstract

X-ray fluorescence holography (XFH) provides three-dimensional atomic images around specific elements without any assumption of the structural model. Six X-ray holograms of Si0.8Ge0.2/Si at different energies were measured at the synchrotron radiation facility of SPring-8. Si and/or Ge atoms within 0.7 nm of a radius were clearly visible in the atomic images reconstructed from the holograms. From these images, slight displacements of the images at each shell in between Si0.8Ge0.2/Si and the Ge bulk were distinctly revealed. This demonstrated that the XFH method has a great potential to quantitatively analyze a three-dimensional local lattice structure in epitaxial crystals.