Journal of Materials Science: Materials in Electronics

, Volume 14, Issue 5, pp 459–462

3D atomic imaging of SiGe system by X-ray fluorescence holography

  • K. Hayashi
  • Y. Takahashi
  • E. Matsubara
  • K. Nakajima
  • N. Usami
Article

DOI: 10.1023/A:1023993911437

Cite this article as:
Hayashi, K., Takahashi, Y., Matsubara, E. et al. Journal of Materials Science: Materials in Electronics (2003) 14: 459. doi:10.1023/A:1023993911437

Abstract

X-ray fluorescence holography (XFH) provides three-dimensional atomic images around specific elements without any assumption of the structural model. Six X-ray holograms of Si0.8Ge0.2/Si at different energies were measured at the synchrotron radiation facility of SPring-8. Si and/or Ge atoms within 0.7 nm of a radius were clearly visible in the atomic images reconstructed from the holograms. From these images, slight displacements of the images at each shell in between Si0.8Ge0.2/Si and the Ge bulk were distinctly revealed. This demonstrated that the XFH method has a great potential to quantitatively analyze a three-dimensional local lattice structure in epitaxial crystals.

Copyright information

© Kluwer Academic Publishers 2003

Authors and Affiliations

  • K. Hayashi
    • 1
  • Y. Takahashi
    • 1
  • E. Matsubara
    • 1
  • K. Nakajima
    • 1
  • N. Usami
    • 1
  1. 1.Institute for Materials ResearchTohoku University of Aoba-kuSendaiJapan