Article

Journal of Materials Science: Materials in Electronics

, Volume 14, Issue 5, pp 349-352

In(Ga)As quantum dots on Ge substrate

  • L. KnuuttilaAffiliated withOptoelectronics Laboratory, Helsinki University of Technology
  • , K. KainuAffiliated withOptoelectronics Laboratory, Helsinki University of Technology
  • , M. SopanenAffiliated withOptoelectronics Laboratory, Helsinki University of Technology
  • , H. LipsanenAffiliated withOptoelectronics Laboratory, Helsinki University of Technology

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Abstract

The effects of growth temperature and deposition thickness on the formation, size, density, and uniformity of InAs and In0.5Ga0.5As islands grown by metalorganic vapor phase epitaxy on a germanium substrate are investigated. Atomic force microscopy images show InAs islands when 0.8–2.0 monolayers are deposited. At the nominal deposition thickness of 2.0 monolayers an island density of 2.5×1010 cm−2 is achieved. InAs islands covered with a GaAs layer show low-temperature luminescence at around 1.15 eV. The In0.5Ga0.5As islands grown at 550 °C show a maximum density of 3.5×1010 cm−2 at a nominal three monolayers deposition thickness.