Journal of Materials Science: Materials in Electronics

, Volume 14, Issue 5, pp 349–352

In(Ga)As quantum dots on Ge substrate

Authors

  • L. Knuuttila
    • Optoelectronics LaboratoryHelsinki University of Technology
  • K. Kainu
    • Optoelectronics LaboratoryHelsinki University of Technology
  • M. Sopanen
    • Optoelectronics LaboratoryHelsinki University of Technology
  • H. Lipsanen
    • Optoelectronics LaboratoryHelsinki University of Technology
Article

DOI: 10.1023/A:1023992432393

Cite this article as:
Knuuttila, L., Kainu, K., Sopanen, M. et al. Journal of Materials Science: Materials in Electronics (2003) 14: 349. doi:10.1023/A:1023992432393

Abstract

The effects of growth temperature and deposition thickness on the formation, size, density, and uniformity of InAs and In0.5Ga0.5As islands grown by metalorganic vapor phase epitaxy on a germanium substrate are investigated. Atomic force microscopy images show InAs islands when 0.8–2.0 monolayers are deposited. At the nominal deposition thickness of 2.0 monolayers an island density of 2.5×1010 cm−2 is achieved. InAs islands covered with a GaAs layer show low-temperature luminescence at around 1.15 eV. The In0.5Ga0.5As islands grown at 550 °C show a maximum density of 3.5×1010 cm−2 at a nominal three monolayers deposition thickness.

Copyright information

© Kluwer Academic Publishers 2003